Semiconductor memory devices and methods of operating semiconductor memory devices

ABSTRACT

A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register and a control logic circuit. The memory cell array includes a plurality of memory cell rows. The scrubbing control circuit generates scrubbing addresses for performing a scrubbing operation on a first memory cell row based on refresh row addresses for refreshing the memory cell rows. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection and correction operation on a plurality of sub-pages in the first memory cell row to count a number of error occurrences during a first interval and determines a sub operation in a second interval in the scrubbing operation based on the number of error occurrences in the first memory cell row.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of priority under 35 USC § 119 toKorean Patent Application No. 10-2020-0185741, filed on Dec. 29, 2020,in the Korean Intellectual Property Office, the disclosure of which isincorporated by reference in its entirety herein.

BACKGROUND

Example embodiments relate to memories, and more particularly tosemiconductor memory devices, and methods of operating semiconductormemory devices.

Semiconductor memory devices may be classified into non-volatile memorydevices such as flash memory devices and volatile memory devices such asDRAMs. High speed operation and cost efficiency of DRAMs make itpossible for DRAMs to be used for system memories. Due to the continuingshrink in fabrication design rule of DRAMs, bit errors of memory cellsin the DRAMs may rapidly increase and yield of the DRAMs may decrease.Therefore, there is a need for greater reliability of the semiconductormemory device.

SUMMARY

Some example embodiments provide a semiconductor memory device withenhanced reliability and performance.

Some example embodiments provide a method of operating a semiconductormemory device with enhanced reliability and performance.

According to example embodiments, a semiconductor memory device includesa memory cell array, an error correction code (ECC) circuit, a faultaddress register and a control logic circuit. The memory cell arrayincludes a plurality of memory cell rows, and each of the plurality ofmemory cell rows includes volatile memory cells coupled to a pluralityof bit-lines. The scrubbing control circuit generates scrubbingaddresses for performing a scrubbing operation on a first memory cellrow selected from the plurality of memory cell rows based on refresh rowaddresses for refreshing the memory cell rows. The control logic circuitconfigured to control the ECC circuit and the scrubbing control circuit.The control logic circuit controls the ECC circuit such that the ECCcircuit performs an error detection and correction operation on aplurality of codewords of a plurality of sub-pages in the first memorycell row by unit of codeword to count a number of error occurrencesduring a first interval in the scrubbing operation; performs a row faultdetection operation to selectively store a row address of the firstmemory cell row in the fault address register as a row fault addressbased on the number of error occurrences in the first memory cell row;and determines a sub operation in a second interval in the scrubbingoperation after the first interval based on the number of erroroccurrences in the first memory cell row.

According to example embodiments, there is provided a method ofoperating a semiconductor memory device which includes a memory cellarray that includes a plurality of memory cell rows, and each of theplurality of memory cell rows includes a plurality of volatile memorycells. According to the method, a first memory cell row is selected fromthe plurality of memory cell rows based on refresh row addresses forrefreshing memory cells connected to the memory cell rows, an errordetection and correction operation on a plurality of codewords of aplurality of sub-pages in the first memory cell row is performed by anerror correction code (ECC) circuit by unit of codeword to count anumber of error occurrences during a first interval in a scrubbingoperation, and a sub operation in a second interval of the scrubbingoperation is determined based on the number of error occurrences. Thesub operation includes one of writing back a corrected codeword in acorresponding sub-page in the first memory cell row and the errordetection and correction operation on a second memory cell row of theplurality of memory cell rows different from the first memory cell row.

According to example embodiments, a semiconductor memory device includesa memory cell array, an error correction code (ECC) circuit, a faultaddress register and a control logic circuit. The memory cell arrayincludes a plurality of memory cell rows, and each of the plurality ofmemory cell rows includes volatile memory cells coupled to a pluralityof bit-lines. The scrubbing control circuit generates scrubbingaddresses for performing a scrubbing operation on a first memory cellrow selected from the plurality of memory cell rows based on refresh rowaddresses for refreshing the memory cell rows. The control logic circuitconfigured to control the ECC circuit and the scrubbing control circuit.The control logic circuit controls the ECC circuit such that the ECCcircuit performs an error detection and correction operation on aplurality of codewords of a plurality of sub-pages in the first memorycell row by unit of codeword to count a number of error occurrencesduring a first interval in the scrubbing operation; performs a row faultdetection operation to selectively store a row address of the firstmemory cell row in the fault address register as a row fault addressbased on the number of error occurrences in the first memory cell row;and determines a sub operation in a second interval in the scrubbingoperation based on the number of error occurrences in the first memorycell row. The control logic circuit controls the ECC circuit to performthe error detection and correction operation on a plurality of sub-pagesin a second memory cell row different from the first memory cell row,selected from the plurality of memory cell rows, in response to thenumber of error occurrences in the first memory cell row being a zero.The sub operation includes one of writing back a corrected codeword in acorresponding sub-page in the first memory cell row and the errordetection and correction operation on a second memory cell row differentfrom the first memory cell row.

Accordingly, a semiconductor memory device includes an ECC circuit, ascrubbing control circuit and a fault address register. The ECC circuitmay rapidly perform scrubbing operation during an initial interval aftera power is applied to the semiconductor memory device and a memory cellrow having a row fault may be rapidly detected.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be described below in more detail withreference to the accompanying drawings.

FIG. 1 is a block diagram illustrating a memory system according toexample embodiments.

FIG. 2 is a block diagram illustrating the semiconductor memory devicein FIG. 1 according to example embodiments.

FIG. 3 illustrates an example of the first bank array in thesemiconductor memory device of FIG. 2.

FIG. 4 is a block diagram illustrating the refresh control circuit inthe semiconductor memory device of FIG. 2 according to exampleembodiments.

FIG. 5 is a circuit diagram illustrating an example of the refresh clockgenerator shown in FIG. 4 according to example embodiments.

FIG. 6 is a circuit diagram illustrating another example of the refreshclock generator in FIG. 4 according to example embodiments.

FIG. 7 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 2 according toexample embodiments.

FIG. 8 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 7 according to exampleembodiments.

FIG. 9 is a block diagram illustrating another example of thesemiconductor memory device in FIG. 1 according to example embodiments.

FIG. 10 is a circuit diagram illustrating disturbance between memorycells of a semiconductor memory device.

FIG. 11 is a block diagram illustrating an example of the victim addressdetector in the semiconductor memory device of FIG. 9 according toexample embodiments.

FIG. 12 is a block diagram illustrating the disturbance detector in thevictim address detector of FIG. 11.

FIG. 13 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 9 according toexample embodiments.

FIG. 14 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 13 according to exampleembodiments.

FIG. 15 illustrates the weak codeword address generator in the scrubbingcontrol circuit of FIG. 13 according to example embodiments.

FIG. 16 illustrates a portion of the semiconductor memory device of FIG.2 in a write operation.

FIG. 17 illustrates a portion of the semiconductor memory device of FIG.2 in a refresh operation or a read operation.

FIG. 18 illustrates an example of the fault address register in thesemiconductor memory device of FIG. 2 according to example embodiments.

FIG. 19 is a block diagram illustrating an example of the ECC circuit inthe semiconductor memory device of FIG. 2 according to exampleembodiments.

FIG. 20 illustrates an example of the ECC encoder in the ECC circuit ofFIG. 19 according to example embodiments.

FIG. 21 illustrates an example of the ECC decoder in the ECC circuit ofFIG. 19 according to example embodiments.

FIG. 22A illustrates that a normal refresh operation and a scrubbingoperation are performed in the semiconductor memory device of FIG. 2according to example embodiments.

FIG. 22B illustrates that a normal refresh operation and an acceleratedscrubbing operation are performed in the semiconductor memory device ofFIG. 2 according to example embodiments.

FIG. 23 illustrates that a scrubbing operation is performed in thesemiconductor memory device of FIG. 2.

FIG. 24 is a flow chart illustrating a scrubbing operation according toexample embodiments.

FIG. 25A and 25B illustrate that a normal refresh operation and anaccelerated scrubbing operation are performed, respectively, in thesemiconductor memory device of according to example embodiments.

FIG. 26A and 26B illustrate a refresh operation and a scrubbingoperation performed in the semiconductor memory device of FIG. 2,respectively.

FIG. 27 is a block diagram illustrating a semiconductor memory deviceaccording to example embodiments.

FIG. 28 is a flow chart illustrating a method of a semiconductor memorydevice according to example embodiments.

FIG. 29 is a diagram illustrating a semiconductor package including thestacked memory device, according to example embodiments.

DETAILED DESCRIPTION

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which exampleembodiments are shown.

FIG. 1 is a block diagram illustrating a memory system according toexample embodiments.

Referring to FIG. 1, a memory system 20 may include a memory controller100 and a semiconductor memory device 200.

The memory controller 100 may control overall operation of the memorysystem 20. The memory controller 100 may control overall data exchangebetween an external host and the semiconductor memory device 200. Forexample, the memory controller 100 may write data in the semiconductormemory device 200 or read data from the semiconductor memory device 200in response to request from the host.

In addition, the memory controller 100 may issue operation commands tothe semiconductor memory device 200 for controlling the semiconductormemory device 200.

In some example embodiments, the semiconductor memory device 200 is amemory device including dynamic memory cells such as a dynamic randomaccess memory (DRAM), double data rate 4 (DDR4) synchronous DRAM(SDRAM), DDR5 SDRAM, a low power DDR4 (LPDDR4) SDRAM, a LPDDR5 SDRAM ora LPDDR6 DRAM.

The memory controller 100 transmits a clock signal CLK, a command CMD,and an address (signal) ADDR to the semiconductor memory device 200 andexchanges main data MD with the semiconductor memory device 200.

The semiconductor memory device 200 includes a memory cell array 300that stores the main data MD and parity data, an error correction code(ECC) circuit 400, a control logic circuit 210, a scrubbing controlcircuit 500 and a fault address register FAR 580.

The ECC circuit 400 may perform ECC encoding on a write data to bestored in a target page of the memory cell array 300, and may performECC decoding or decoding on a codeword read from the target page undercontrol of the control logic circuit 210.

The scrubbing control circuit 500 may generate scrubbing addresses suchthat scrubbing operation is performed on a first memory cell row of aplurality of memory cell rows whenever refresh operation is performed onN memory cell rows when the refresh operation is performed on theplurality of memory cell rows included in the memory cell array 300.Here, N is a natural number equal to or greater than three. In anaccelerated scrubbing mode, the scrubbing control circuit 500 maygenerate the scrubbing addresses whenever refresh operation is performedon memory cell rows smaller than N memory cell rows.

The scrubbing operation may include an error detection and correctionoperation performed during a first interval of the scrubbing operationand a sub operation performed during a second interval of the scrubbingoperation.

The control logic circuit 210 may control the ECC circuit 400 such thatthe ECC circuit 400 performs an error detection and correction operationon a plurality of sub-pages in the first memory cell row by unit ofcodeword to count a number of error occurrences and performs a row faultdetection operation to selectively store a row address of the firstmemory cell row in the fault address register 580 as a row fault addressbased on the number of error occurrences in the first memory cell rowduring the first interval in the scrubbing operation. The control logiccircuit 210 may determine the sub operation in the second interval ofthe scrubbing operation based on the number of error occurrences in thefirst memory cell row. The sub operation may include one of writing backa corrected codeword (C_CW) and the error detection and correctionoperation on a second memory cell row different from the first memorycell row.

The control logic circuit 210 may control the ECC circuit 400 to writeback the corrected codeword in a corresponding sub-page in the firstmemory cell row in response to the number of error occurrences beingsmaller than a reference value. The control logic circuit 210 maycontrol the ECC circuit 400 not to write back the corrected codeword ina corresponding sub-page in the first memory cell row in response to thenumber of error occurrences being equal to or greater than the referencevalue. The control logic circuit 210 may control the ECC circuit 400 toperform the error detection and correction operation on the secondmemory cell row in the second interval of the scrubbing operation.

When an access address is associated with a read command from the memorycontroller 100 and the access address matches the row fault addressafter a row address of the first memory cell row is stored in the faultaddress register 580 as a row fault address the control logic circuit210 may control the ECC circuit 400 to skip an ECC decoding on a memorycell row designated by the access address.

FIG. 2 is a block diagram illustrating the semiconductor memory devicein FIG. 1 according to example embodiments.

Referring to FIG. 2, the semiconductor memory device 200 may include thecontrol logic circuit 210, an address register 220, a bank control logic230, a refresh control circuit 385, a row address multiplexer 240, acolumn address latch 250, a row decoder 260, a column decoder 270, thememory cell array 300, a sense amplifier unit 285, an input/output (I/O)gating circuit 290, the ECC circuit 400, the scrubbing control circuit500, a data I/O buffer 295, the fault address register 580, an addresscomparator 590 and a fuse circuit 595.

The memory cell array 300 may include a plurality of bank arrays 310a˜310 s. The row decoder 260 may include a plurality of bank rowdecoders 260 a˜260 s respectively coupled to the plurality of bankarrays 310 a˜310 s, the column decoder 270 includes a plurality of bankcolumn decoders 270 a˜270 s respectively coupled to the plurality ofbank arrays 310 a˜310 s, and the sense amplifier unit 285 includes aplurality of sense amplifiers 285 a˜285 s respectively coupled to theplurality of bank arrays 310 a˜310 s.

The plurality of bank arrays 310 a˜310 s, the plurality of bank rowdecoders 260 a˜260 h, the plurality of bank column decoders 270 a˜270 hand the plurality of sense amplifiers 285 a˜285 s may form a pluralityof banks. Each of the plurality of bank arrays 310 a˜310 s may include aplurality of volatile memory cells MC formed at intersections of aplurality of word-lines WL and a plurality of bit-line BTL.

The address register 220 may receive the address ADDR including a bankaddress BANK_ADDR, a row address ROW_ADDR and a column address COL_ADDRfrom the memory controller 100. The address register 220 may provide thereceived bank address BANK_ADDR to the bank control logic 230, mayprovide the received row address ROW_ADDR to the row address multiplexer240, and may provide the received column address COL_ADDR to the columnaddress latch 250.

The bank control logic 230 may generate bank control signals in responseto the bank address BANK_ADDR. One of the plurality of bank row decoders260 a˜260 s corresponding to the bank address BANK_ADDR may be activatedin response to the bank control signals, and one of the plurality ofbank column decoders 270 a˜270 s corresponding to the bank addressBANK_ADDR may be activated in response to the bank control signals.

The row address multiplexer 240 may receive the row address ROW_ADDRfrom the address register 220, and receives a refresh row addressREF_ADDR from the refresh control circuit 385. The row addressmultiplexer 240 may selectively output the row address ROW_ADDR or therefresh row address REF_ADDR as a row address RA. The row address RAthat is output from the row address multiplexer 240 may be applied tothe plurality of bank row decoders 260 a˜260 h.

The refresh control circuit 385 may sequentially output the refresh rowaddress REF_ADDR in response to a first refresh control signal IREF1 ora second refresh control signal IREF2 from the control logic circuit210.

When the command CMD from the memory controller 100 corresponds to anauto refresh command, the control logic circuit 210 may apply the firstrefresh control signal IREF1 to the refresh control circuit 385 wheneverthe control logic circuit 210 receives the auto refresh command.

When the command CMD from the memory controller 100 corresponds to aself-refresh entry command, the control logic circuit 210 may apply thesecond refresh control signal IREF2 to the refresh control circuit 385and the second refresh control signal IREF2 is activated from a timepoint when the control logic circuit 210 receives the self-refresh entrycommand to a time point when control logic circuit 210 receives aself-refresh exit command. The refresh control circuit 385 maysequentially increase or decrease the refresh row address REF_ADDR inresponse to receiving the first refresh control signal IREF1 or duringthe second refresh control signal IREF2 is activated.

The activated one of the plurality of bank row decoders 260 a˜260 s, bythe bank control logic 230, may decode the row address RA that is outputfrom the row address multiplexer 240, and may activate a word-linecorresponding to the row address RA. For example, the activated bank rowdecoder may apply a word-line driving voltage to the word-linecorresponding to the row address RA.

The column address latch 250 may receive the column address COL_ADDRfrom the address register 220, and temporarily stores the receivedcolumn address COL_ADDR. In some embodiments, in a burst mode, thecolumn address latch 250 may generate column addresses COL_ADDR′ thatincrement from the received column address COL_ADDR. The column addresslatch 250 may apply the temporarily stored or generated column addressCOL_ADDR′ to the plurality of bank column decoders 270 a˜270 s.

The activated one of the plurality of bank column decoders 270 a˜270 smay activate a sense amplifier corresponding to the bank addressBANK_ADDR and the column address COL_ADDR′ through the I/O gatingcircuit 290.

The I/O gating circuit 290 may include a circuitry for gatinginput/output data, and may further include input data mask logic, readdata latches for storing data that is output from the plurality of bankarrays 310 a˜310 s, and write drivers for writing data to the pluralityof bank arrays 310 a˜310 s.

Codeword CW read from one bank array of the plurality of bank arrays 310a˜310 s may be sensed by a sense amplifier coupled to the one bank arrayfrom which the data is to be read, and is stored in the read datalatches of the I/O gating circuit 290. The codeword CW stored in theread data latches may be provided to the memory controller 100 via thedata I/O buffer 295 after ECC decoding is performed on the codeword CWby the ECC circuit 400.

The main data MD to be written in one bank array of the plurality ofbank arrays 310 a˜310 s may be provided to the data I/O buffer 295 fromthe memory controller 100, may be provided to the ECC circuit 400 fromthe data I/O buffer 295, the ECC circuit 400 may perform an ECC encodingon the main data MD to generate parity data, the ECC circuit 400 mayprovide the main data MD and the parity data to the I/O gating circuit290 and the I/O gating circuit 290 may write the main data MD and theparity data in a sub-page of the target page in one bank array throughthe write drivers.

The data I/O buffer 295 may provide the main data MD from the memorycontroller 100 to the ECC circuit 400 in a write operation of thesemiconductor memory device 200, based on the clock signal CLK and mayprovide the main data MD from the ECC circuit 400 to the memorycontroller 100 in a read operation of the semiconductor memory device200.

The ECC circuit 400 may perform an ECC decoding on a codeword read froma sub-page of the target page and may provide an error generation signalEGS to the control logic circuit 210 when the at least one error bit isdetected in the codeword.

The scrubbing control circuit 500 may count the refresh row addressREF_ADDR which sequentially changes and may output a normal scrubbingaddress SCADDR whenever the scrubbing control circuit 500 counts Nrefresh row addresses. Here, N is a natural number equal to or greaterthan three. The normal scrubbing address SCADDR may include a scrubbingrow address SRA and a scrubbing column address SCA. The scrubbingcontrol circuit 500 may provide the scrubbing row address SRA and thescrubbing column address SCA to the row decoder 260 and the columndecoder 270, respectively.

The control logic circuit 210 may control operations of thesemiconductor memory device 200. For example, the control logic circuit210 may generate control signals for the semiconductor memory device 200in order to perform a write operation or a read operation. The controllogic circuit 210 includes a command decoder 211 that decodes thecommand CMD received from the memory controller 100 and a mode register212 that sets an operation mode of the semiconductor memory device 200.

The control logic circuit 210 may further include a counter 214 thatcounts the error generation signal EGS. The counter 214 may count theerror generation signal EGS in a scrubbing operation on the first memorycell row, the control logic circuit 210 may compare a number of erroroccurrences (i.e., the counted error generation signal) with a referencevalue VTH and may provide the ECC circuit 400 with an error thresholdflag ETF when the number of error occurrences is equal to or greaterthan the reference value VTH.

The control logic circuit 210 may store a row address of the firstmemory cell row in the fault address register 580 as a row fault addressRF_ADDR in response to the number of error occurrences in the firstmemory cell row being equal to or greater than the reference value VTH.The control logic circuit 210 may halt an operation of the counter 214when the number of error occurrences in the first memory cell row isequal to or greater than the reference value VTH. The control logiccircuit 210 may include a comparator that compares the number of erroroccurrences with the reference value VTH and outputs the error thresholdflag ETF which is activated when the number of error occurrences isequal to or greater than the reference value VTH. The reference valueVTH may be K and K is a natural number equal to or greater than two.

In addition, the command decoder 211 may generate the control signalscorresponding to the command CMD by decoding a write enable signal, arow address strobe signal, a column address strobe signal, a chip selectsignal, etc.

The control logic circuit 210 may generate a first control signal CTL1to control the I/O gating circuit 290, a second control signal CTL2 tocontrol the ECC circuit 400, and a third control signal CTL3 to controlthe scrubbing control circuit 500. In addition, the control logiccircuit 210 may provide the refresh control circuit 385 with a modesignal MS associated with a refresh period. The control logic circuit210 may generate the mode signal MS based on a temperature signal (notshown) representing an operating temperature of the semiconductor memorydevice 200.

The fuse circuit 595 may store the reference value VTH and may providethe reference value VTH to the control logic circuit 210. The fusecircuit 595 may vary the reference value VTH by programming.

The address comparator 590 may compare a row address ROW_ADDR of theaccess address ADDR from the memory controller 100 with the row faultaddress RF_ADDR stored in the fault address register 580 to provide thecontrol logic circuit 210 with a match signal MTS based on a result ofthe comparison (for example, when the row address ROW_ADDR matches therow fault address RF_ADDR). The control logic circuit 210 may controlthe ECC circuit 400 to skip ECC decoding on a memory cell row designatedby the row address ROW_ADDR in response to the match signal MTS.

FIG. 3 illustrates an example of the first bank array in thesemiconductor memory device of FIG. 2.

Referring to FIG. 3, the first bank array 310 a includes a plurality ofword-lines WL0˜WLm (m is a natural number greater than two), a pluralityof bit-lines BTL0˜BTLn (n is a natural number greater than two), and aplurality of volatile memory cells MCs disposed at intersections betweenthe word-lines WL0˜WLm and the bit-lines BTL0˜BTLn. Each of the memorycells MCs includes a cell transistor coupled to each of the word-linesWL0˜WLm and each of the bit-lines BTL0˜BTLn and a cell capacitor coupledto the cell transistor. Each of the memory cells MCs may have a DRAMcell structure. The bit-lines BTL0˜BTLn extend in a first direction D1and the word-lines WL0˜WLm in a second direction D2.

FIG. 4 is a block diagram illustrating an example of the refresh controlcircuit in the semiconductor memory device of FIG. 2 according toexample embodiments.

Referring to FIG. 4, the refresh control circuit 385 may include arefresh clock generator 390 and a refresh counter 397.

The refresh clock generator 390 may generate a refresh clock signal RCKin response to the first refresh control signal IREF1, the secondrefresh control signal IREF2 and the mode signal MS. The mode signal MSmay determine a refresh period of a refresh operation. As describedabove, the refresh clock generator 390 may generate the refresh clocksignal RCK whenever the refresh clock generator 390 receives the firstrefresh control signal IREF1 or during the second refresh control signalIREF2 is activated.

The refresh counter 397 may generate the refresh row address REF_ADDRdesignating sequentially the memory cell rows by performing countingoperation at the period of the refresh clock signal RCK.

FIG. 5 is a circuit diagram illustrating an example of the refresh clockgenerator shown in FIG. 4 according to example embodiments.

Referring to FIG. 5, a refresh clock generator 390 a may include aplurality of oscillators 391, 392 and 393, a multiplexer 394 and adecoder 395 a. The decoder 395 a may decode the first refresh controlsignal IREF1, the second refresh control signal IREF2 and the modesignal MS to output a clock control signal RCS1. The oscillators 391,392, and 393 generate refresh clock signals RCK1, RCK2 and RCK3 havingdifferent periods from each other. The multiplexer 394 selects one ofthe refresh clock signals RCK1, RCK2 and RCK3 to provide the refreshclock signal RCK in response to the clock control signal RCS1.

FIG. 6 is a circuit diagram illustrating another example of the refreshclock generator in FIG. 4 according to example embodiments.

Referring to FIG. 6, a refresh clock generator 390 b may include adecoder 395 b, a bias unit 396 a and an oscillator 396 b. The decoder395 b may decode the first refresh control signal IREF1, the secondrefresh control signal IREF2 and the mode signal MS to output a clockcontrol signal RCS2. The bias unit 396 a generates a control voltageVCON in response to the clock control signal RCS2. The oscillator 396 bgenerates the refresh pulse signal RCK having a variable period,according to the control voltage VCON.

FIG. 7 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 2 according toexample embodiments.

Referring to FIG. 7, the scrubbing control circuit 500 may include acounter 505, and a scrubbing address generator 510.

The counter 505 counts the refresh row address REF_ADDR and generates aninternal scrubbing signal ISRB which is activated during a firstinterval when the counter 505 counts the refresh row address REF_ADDR bya number designated by a counting control signal CCS. The first intervalmay correspond to a time interval for refreshing one memory cell row.The counter 505 may change the number designated by the counting controlsignal CCS in response to a scrubbing accelerated signal SAS. Forexample, the counter 505 may reduce the number designated by thecounting control signal CCS when the SAS indicates the acceleratedscrubbing mode.

The scrubbing address generator 510 generates a normal scrubbing addressSCADDR associated with a normal scrubbing operation for codewords ineach of the memory cell rows, which gradually changes in a firstscrubbing mode, in response to the internal scrubbing signal ISRB.

The normal scrubbing address SCADDR includes a scrubbing row address SRAand a scrubbing column address SCA. The scrubbing row address SRAdesignates one page in one bank array and the scrubbing column addressSCA designates one of codewords in the one page. The scrubbing addressgenerator 510 provides the scrubbing row address SRA to a correspondingrow decoder and provides the scrubbing column address SCA to acorresponding column decoder.

The scrubbing operation performed based on the normal scrubbing addressSCADDR may be referred to as a normal scrubbing operation because thescrubbing operation performed based on the normal scrubbing addressSCADDR is performed on all codewords included in the memory cell array300.

FIG. 8 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 7 according to exampleembodiments.

Referring to FIG. 8, the scrubbing address generator 510 may include apage segment counter 511 and a row counter 513.

The page segment counter 511 increases the scrubbing column address SCAby one during the internal scrubbing signal ISRB is activated andactives a maximum address detection signal MADT with being resetwhenever the scrubbing column address SCA reaches its maximum value, inresponse to the internal scrubbing signal. The page segment counter 511provides the maximum address detection signal MADT to the row counter513.

The row counter 513 starts counting operation one receiving the internalscrubbing signal ISRB initially and increases the scrubbing row addressSRA by one whenever the activated maximum address detection signal MADTreceives in response to the internal scrubbing signal ISRB. Since theinternal scrubbing signal ISRB is activated during the first intervalwhile a refresh operation is performed on one memory cell row, the pagesegment counter 511 may generate the scrubbing column address SCAassociated with codewords in one page during the first interval.

FIG. 9 is a block diagram illustrating another example of thesemiconductor memory device in FIG. 1 according to example embodiments.

A semiconductor memory device 200 a of FIG. 9 differs from thesemiconductor memory device 200 of FIG. 2 in that the semiconductormemory device 200 a further includes a victim address detector 560 and ascrubbing control circuit 500 a outputs a weak codeword address WCADDRin a second scrubbing mode.

Referring to FIG. 9, a control logic circuit 210 a may further generatea fourth control signal CTL 4 for controlling the victim addressdetector 560.

The victim address detector 560 may count a number of accesses to afirst memory region in the memory cell array 300 to generate at leastone victim address VCT_ADDR designating at least one adjacent memoryregion adjacent to the first memory region when the number of thecounted accesses to the first memory region reaches a reference numberof times during a reference interval. The victim address VCT_ADDR may bestored in an address storing table of the scrubbing control circuit 500a.

The scrubbing control circuit 500 a may provide the scrubbing rowaddress SRA and the scrubbing column address SCA to the row decoder 260and the column decoder 270, respectively in a first scrubbing mode. Thescrubbing control circuit 500 a, in a second scrubbing mode, may outputan address of codeword associated with the victim address VCT_ADDRstored in an address storing table therein as a weak codeword addressWCADDR. The weak codeword address WCADDR may include a weak codeword rowaddress WCRA and a weak codeword column address WCCA. The scrubbingcontrol circuit 500 a may provide the weak codeword row address WCRA andthe weak codeword column address WCCA to the row decoder 260 and thecolumn decoder 270, respectively in the second scrubbing mode.

FIG. 10 is a circuit diagram illustrating disturbance between memorycells of a semiconductor memory device.

Referring to FIG. 10, a part of the semiconductor memory device 200 aincludes memory cells 51, 52, and 53 and a bit-line sense amplifier 60.

It is assumed that each of the memory cells 51, 52, and 53 is connectedto the same bit-line BTL. In addition, the memory cell 51 is connectedto a word-line WL<g−1>, the memory cell 52 is connected to a word-lineWL<g>, and the memory cell 53 is connected to a word-line WL<g+1>. Asshown in FIG. 10, the word-lines WL<g−1> and WL<g+1> are locatedadjacent to the word-line WL<g>. The memory cell 51 includes an accesstransistor CT1 and a cell capacitor CC1. A gate terminal of the accesstransistor CT1 is connected to the word-line WL<g−1> and its oneterminal is connected to the bit-line BTL. The memory cell 52 includesan access transistor CT2 and a cell capacitor CC2. A gate terminal ofthe access transistor CT2 is connected to the word-line WL<g> and itsone terminal is connected to the bit-line BTL. Also, the memory cell 53includes an access transistor CT3 and a cell capacitor CC3. A gateterminal of the access transistor ST3 is connected to the word-lineWL<g+1> and its one terminal is connected to the bit-line BTL.

The bit-line sense amplifier 60 may include an N sense amplifierdischarging a low level bit line among bit lines BTL and BTLB and a Psense amplifier charging a high level bit line among the bit lines BTLand BTLB.

During a refresh operation, the bit-line sense amplifier 60 rewritesdata stored through the N sense amplifier or the P sense amplifier in aselected memory cell. During a read operation or a write operation, aselect voltage (for example, Vpp) is provided to the word-line WL<g>.Then, due to capacitive coupling effect, a voltage of adjacentword-lines WL<g−1> and WL<g+1> rises even when no select voltage isapplied to the adjacent word-lines WL<g−1> and WL<g+1>. Such capacitivecoupling is indicated with parasitic capacitances Ccl1 and Ccl2.

During no refresh operation, when the word-line WL<g> is accessedrepeatedly, charges stored in the cell capacitors CC1 and CC3 of thememory cells 51 and 53 connected to the word-lines WL<g−1> and WL<g+1>may leak gradually. In this case, the reliability of a logic ‘0’ storedin the cell capacitor CC1 and a logic ‘1’ stored in the cell capacitorCC3 may not be guaranteed. Therefore, the scrubbing operation on thememory cells is needed at an appropriate time.

FIG. 11 is a block diagram illustrating an example of the victim addressdetector in the semiconductor memory device of FIG. 9 according toexample embodiments.

Referring to FIG. 11, the victim address detector 560 may include adisturbance detector 570 and a victim address generator 577.

The disturbance detector 570 may count a number of accesses to a firstmemory region (e.g., at least one memory cell row) based on the rowaddress ROW_ADDR and may generate a first detection signal DET1 when thenumber of the counted accesses reaches a reference value during areference (or predetermined) interval.

The victim address generator 577 may generate the at least one of victimaddresses VCT_ADDR1 and VCT_ADDR2 in response to the first detectionsignal DET1. The at least one of victim addresses VCT_ADDR1 andVCT_ADDR2 may be a row address designating a second memory region or athird memory region which are located adjacent to the first memoryregion. The victim address generator 577 may provide the at least one ofvictim addresses VCT_ADDR1 and VCT_ADDR2 to an address storing table inthe scrubbing control circuit 500 a.

FIG. 12 is a block diagram illustrating the disturbance detector in thevictim address detector of FIG. 11.

Referring to FIG. 12, the disturbance detector 570 may include accesscounter 571, a threshold register 573 and a comparator 575.

The access counter 571 may count a number of accesses to a specifiedaddress (or a specified memory region) based on the row addressROW_ADDR. For example, the access counter 571 may count a number ofaccesses to a specified word-line. The number of accesses may be countedon a specific word-line or a word-line group including at least twoword-lines. Moreover, a count of the number of accesses may be performedby a specific block unit, a bank unit, or a chip unit.

The threshold register 573 may store a maximum disturbance occurrencecount that guarantees the reliability of data in a specific word-line ora memory unit. For example, a threshold (or a reference value) on oneword-line may be stored in the threshold register 573. Alternatively, athreshold on one word line group, one block, one bank unit, or one chipunit may be stored in the threshold register 573.

The comparator 575 may compare the reference value stored in thethreshold register 573 to the number of accesses to a specific memoryregion counted by the access counter 571. If there is a memory regionwhere the counted number of accesses reaches the reference value, thecomparator 575 generates the first detection signal DET1. The comparator575 provides the first detection signal DET1 to the victim addressgenerator 577.

FIG. 13 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 9 according toexample embodiments.

Referring to FIG. 13, the scrubbing control circuit 500 a may include acounter 505, a scrubbing address generator 510 a and a weak codewordaddress generator 520 a.

Operations of the counter 505, a scrubbing address generator 510 a aresubstantially similar to operations of the counter 505 and the scrubbingaddress generator 510 in FIG. 7. The scrubbing address generator 510 afurther receives a scrubbing mode signal SMS and generates the normalscrubbing address SCADDR in the first scrubbing mode.

The weak codeword address generator 520 a generates a weak codewordaddress WCADDR associated with a weak scrubbing operation associatedwith weak codewords in the bank array in the second scrubbing mode, inresponse to the internal scrubbing signal ISRB and the scrubbing modesignal SMS. The weak codeword address WCADDR includes a weak codewordrow address WCRA and a weak codeword column address WCCA.

The scrubbing mode signal SMS indicates the first scrubbing mode whenthe scrubbing mode signal SMS has a first logic level and indicates thesecond scrubbing mode when the scrubbing mode signal SMS has a secondlogic level. The scrubbing mode signal SMS may be included in the thirdcontrol signal CTL3. The weak codeword address generator 520 a providesthe weak codeword row address WCRA to the corresponding row decoder andprovides the weak codeword column address SCA to the correspondingcolumn decoder.

The weak codeword address generator 520 a may include an address storingtable therein and the address storing table may store addresses ofcodewords associated with the victim address VCT_ADDR. The scrubbingoperation performed based on the weak codeword address WCADDR may bereferred to as a target scrubbing operation because the scrubbingoperation is performed on the weak codewords.

FIG. 14 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 13 according to exampleembodiments.

Referring to FIG. 14, the scrubbing address generator 510 a may includea page segment counter 511 a and a row counter 513 a.

The page segment counter 511 a increases the scrubbing column addressSCA by one during the internal scrubbing signal ISRB is activated in thefirst scrubbing mode and actives a maximum address detection signal MADTwith being reset whenever the scrubbing column address SCA reaches itsmaximum value, in response to the internal scrubbing signal ISRB and thescrubbing mode signal SMS. The page segment counter 511 a provides themaximum address detection signal MADT to the row counter 513 a.

The row counter 513 a starts counting operation one receiving theinternal scrubbing signal ISRB initially and increases the scrubbing rowaddress SRA by one whenever the activated maximum address detectionsignal MADT in response to the internal scrubbing signal ISRB and thescrubbing mode signal SMS.

FIG. 15 illustrates the weak codeword address generator in the scrubbingcontrol circuit of FIG. 13 according to example embodiments.

Referring to FIG. 15, the weak codeword address generator 520 a mayinclude a table pointer 521, an address storing table 530 and a sensingunit 540.

The address storing table 530 stores address information WCRA1˜WCRAv andWCCA1˜WCCAw (w is a natural number greater than v) of weak codewordsincluded in the memory cell array 300.

The weak codewords may be all or some of a weak page including a numberof error bit greater than a reference value among pages in bank arraysof the memory cell array. In addition, the weak codewords may becodewords of neighbor pages adjacent to the intensively accessed memoryregion.

The table pointer 521 may generate a pointer signal TPS which providelocation information for the address storing table 530 in response tothe internal scrubbing signal ISRB and the scrubbing mode signal SMSduring the first interval in the second scrubbing mode, and provides thepointer signal TPS to the address storing table 530. The address storingtable 530 may include a nonvolatile storage. The at least one of victimaddresses VCT_ADDR1 and VCT_ADDR2 provided from the victim addressgenerator 577 in FIG. 11 may be stored in the address storing table 530.

The pointer signal TPS gradually increases by a predetermined timesduring the first interval and the address storing table 530 may outputthe weak codeword address stored in a location (indicated by the pointersignal TPS) as the weak codeword row address WCRA and the weak codewordcolumn address WCCA through the sensing unit 540 in response to thepointer signal TPS whenever the pointer signal TPS is applied. Thesensing unit 540 provides the weak codeword row address WCRA to acorresponding row decoder and provides the weak codeword column addressWCCA to a corresponding column decoder.

The control logic circuit 210 a may apply different refresh periods tosome memory cell rows based on a number of error bits for each of thememory cell rows, which are detected by the scrubbing operation.

FIG. 16 illustrates a portion of the semiconductor memory device 200 ofFIG. 2 or 200 a of FIG. 9 in a write operation.

In FIG. 16, the control logic circuit 210, the first bank array 310 a,the I/O gating circuit 290, and the ECC circuit 400 are illustrated.

Referring to FIG. 16, the first bank array 310 a includes a normal cellarray NCA and a redundancy cell array RCA. The normal cell array NCAincludes a plurality of first memory blocks MB0˜MB15, i.e., 311˜313, andthe redundancy cell array RCA includes at least a second memory block314. The first memory blocks 311˜313 are memory blocks determining amemory capacity of the semiconductor memory device 200. The secondmemory block 314 is for ECC and/or redundancy repair. Since the secondmemory block 314 for ECC and/or redundancy repair is used for ECC, dataline repair and block repair to repair ‘failed’ cells generated in thefirst memory blocks 311˜313, the second memory block 314 is alsoreferred to as an EDB block. In each of the first memory blocks 311˜313,a plurality of first memory cells are arranged in rows and columns. Inthe second memory block 314, a plurality of second memory cells arearranged in rows and columns. The first memory cells connected tointersections of the word-lines WL and the bit-lines BTL may be dynamicmemory cells. The second memory cells connected to intersections of theword-lines WL and bit-lines RBTL may be dynamic memory cells.

The I/O gating circuit 290 includes a plurality of switching circuits291 a˜291 d respectively connected to the first memory blocks 311˜313and the second memory block 314. In the semiconductor memory device 200,bit-lines corresponding to data of a burst length (BL) may besimultaneously accessed to support the BL indicating the maximum numberof column positions that is accessible. For example, the BL may be setto 8.

The ECC circuit 400 may be connected to the switching circuits 291 a˜291d through first data lines GIO and second data lines EDBIO. The controllogic circuit 210 may receive the command CMD and the address ADDR andmay decode the command CMD to generate the first control signal CTL1 forcontrolling the switching circuits 291 a˜291 d and the second controlsignal CTL2 for controlling the ECC circuit 400.

When the command CMD is a write command, the control logic circuit 210may provide the second control signal CTL2 to the ECC circuit 400 andthe ECC circuit 400 may perform the ECC encoding on the main data MD togenerate parity data associated with the main data MD and provides theI/O gating circuit 290 with the codeword CW including the main data MDand the parity data. The control logic circuit 210 may provide the firstcontrol signal CTL1 to the I/O gating circuit 290 such that the codewordCW is to be stored in a sub-page of the target page in the first bankarray 310 a.

FIG. 17 illustrates a portion of the semiconductor memory device 200 ofFIG. 2 or 200 a of FIG. 9 in a refresh operation (scrubbing operation)or a read operation.

In FIG. 17, the control logic circuit 210, the first bank array 310 a,the I/O gating circuit 290, the ECC circuit 400, the fault addressregister 580 and the address comparator 590 are illustrated.

Referring to FIG. 17, when the command CMD is a refresh command todesignate a refresh operation, the scrubbing control circuit 500 maygenerate the scrubbing addresses based on counting the refresh rowaddresses and the control logic circuit 210 may provide the firstcontrol signal CTL1 to the I/O gating circuit 290 such that a readcodeword RCW stored in each of sub-pages of the target page in the firstbank array 310 a is sequentially provided to the ECC circuit 400. Forexample, the read codeword RCW may include a first parity data and afirst main data.

The ECC circuit 400 may perform an error detection and correctionoperation on the read codeword RCW and may provide the error generationsignal EGS to the control logic circuit 210 in response to detecting anerror bit during a first interval of the scrubbing operation. Thecontrol logic circuit 210 may count the error generation signal EGS (anumber of error occurrences) for one page and may determine whether arow fault occurs in the target page based on comparison of the number oferror occurrences with the reference value VTH. When the number of erroroccurrences is equal to or greater than the reference value VTH, thecontrol logic circuit 210 may provide the ECC circuit 400 with the errorthreshold flag ETF having a high level and may store a row address ofthe target page in the fault address register 580.

The control logic circuit 210 may write back a corrected codeword C_CWin a corresponding sub-page or may perform an error detection andcorrection operation on a second memory cell row different from thefirst memory cell row based on comparison of the number of erroroccurrences with the reference value VTH. For example, the correctedcodeword C_CW may include a second parity data and a second main data.For example, the control logic circuit 210 may control the ECC circuit400 to skip writing back the corrected codeword C_CW in thecorresponding sub-page in response to the number of error occurrencesbeing equal to or greater than the reference value VTH. For example, thecontrol logic circuit 210 may control the ECC circuit 400 to write backthe corrected codeword C_CW in the corresponding sub-page in response tothe number of error occurrences being greater than zero and smaller thanthe reference value VTH, during the second interval of the scrubbingoperation. For example, the control logic circuit 210 may control theECC circuit 400 to perform the error detection and correction operationon a plurality of sub-pages in a second memory cell row different fromthe first memory cell row, in response to the number of erroroccurrences in the first memory cell row being a zero. The control logiccircuit 210 may perform the scrubbing operation on memory cell rowsrapidly because the number of error occurrences of most memory cell rowsis zero.

When the command CMD corresponds to a read command, the ECC circuit 400may provide a corrected main data C_MD to the data I/O buffer 295 withskipping of writing back the corrected codeword C_CW. For example, thecorrected main data C_MD may include a third main data.

When the command CMD corresponds to a read command after the row faultaddress RF_ADDR is stored in the fault address register 580, the addresscomparator 590 may compare the row address ROW_ADDR with the row faultaddress RF_ADDR and may provide the control logic circuit 210 with thematch signal MTS indicating a result of the comparison. When the matchsignal MTS indicates that the row address ROW_ADDR matches the row faultaddress RF_ADDR, the control logic circuit 210 may control the ECCcircuit 400 to skip an ECC decoding on a memory cell row designated bythe row address ROW_ADDR.

FIG. 18 illustrates the fault address register in the semiconductormemory device 200 of FIG. 2 or 200 a of FIG. 9 according to exampleembodiments.

Referring to FIG. 18, each of indexes (e.g., entries) Idx11, Idx12, . .. , Idx1 u (u is a natural number greater than two) of the fault addressregister 580 may include information on row fault address RF_ADDR ofeach of row fault memory cell rows which are determined to have rowfaults during a first interval of the scrubbing operation. The faultaddress register 580 includes a plurality of columns 581 and 583.

The column 581 stores row fault address RF_ADDR of each of the row faultmemory cell rows and the column 583 stores a number of error occurrencesECNT of each of the row fault memory cell rows. The row fault addressRF_ADDR may include a bank group address (‘BGA’), a bank address (‘BA’),and a row address (‘RA’) of each of the row fault memory cell rows.

In FIG. 18, it is assumed that a memory cell row is determined to have arow fault when the number of error occurrences ECNT detected during thefirst interval is equal to or greater than three.

The control logic circuit 210 in FIG. 2 may perform a soft post packagerepair (PPR) on at least some of the row fault memory cell rows byreferring to the fault address register 580. The control logic circuit210 may perform a soft PPR on the at least some of the row fault memorycell rows by storing (moving) data stored in the at least some of therow fault memory cell rows in a redundancy region of the memory cellarray 300. The row fault address RF_ADDR of the at least some of the rowfault memory cell rows on which the soft PPR is performed is reset inthe fault address register 580 and a row fault address of a new rowfault memory cell row may be stored in the fault address register 580.

FIG. 19 is a block diagram illustrating an example of the ECC circuit inthe semiconductor memory device 200 of FIG. 2 according to exampleembodiments.

Referring to FIG. 19, the ECC circuit 400 may include an ECC encoder410, an ECC decoder 430 and a (ECC) memory 415. The memory 415 may storean ECC 420. The ECC 420 may be a single error correction (SEC) code or asingle error correction/double error detection (SECDED) code.

The ECC encoder 410 may generate parity data PRT using the ECC 420,associated with a write data WMD to be stored in the normal cell arrayNCA of the first bank array 310 a. The parity data PRT may be stored inthe redundancy cell array RCA of the first bank array 310 a.

The ECC decoder 430 may perform an ECC decoding on a read data RMD basedon the read data RMD and the parity data PRT read from the first bankarray 310 a using the ECC 420. When the read data RMD includes at leastone error bit as a result of the ECC decoding, the ECC decoder 430 mayprovide the error generation signal EGS to the control logic circuit210, may selectively correct the error bit in the read data RMD and maywrite back the corrected codeword C_CW in a scrubbing operation andoutputs the corrected main data C_MD in a read operation.

FIG. 20 illustrates an example of the ECC encoder in the ECC circuit ofFIG. 19 according to example embodiments.

Referring to FIG. 20, the ECC encoder 410 may include a parity generator420. The parity generator 420 may receive write data WMD and basis bitBB and may generate the parity data PRT by performing, for example, anXOR array operation.

FIG. 21 illustrates an example of the ECC decoder in the ECC circuit 400of FIG. 19 according to example embodiments.

Referring to FIG. 21, the ECC decoder 430 may include a syndromegeneration circuit 440, an error locator 460, a data corrector 470, adata latch 480, a multiplexer 485 and a demultiplexer 490. The syndromegeneration circuit 440 may include a check bit generator 441 and asyndrome generator 443.

The check bit generator 441 may generate check bits CHB based on theread data RMD by performing, an XOR array operation and the syndromegenerator 443 may generate a syndrome SDR by comparing correspondingbits of the parity data PRT and the check bits CHB.

The error locator 460 may generate an error position signal EPSindication a position of an error bit in the read data RMD to providethe error position signal EPS to the data corrector 470 when all bits ofthe syndrome SDR are not ‘zero’. In addition, when the read data RMDincludes the error bit, the error locator 460 may provide the errorgeneration signal EGS to the control logic circuit 210.

The data latch 480, in a scrubbing operation, may receive page data PDTincluding a plurality of read data RMDs, may provide the data corrector470 and the multiplexer 485 with the read data RMD including correctableerror bit in a scrubbing operation or may provide the data corrector 470with the read data RMD without regard to error bit, in a read operation,in response to an operation mode signal OMS and a data control signalDCS. The operation mode signal OMS may designate one of the scrubbingoperation and the read operation. The operation mode signal OMS and thedata control signal DCS may be included in the second control signalCTL2 in FIG. 2.

The data corrector 470 may receive the read data RMD, may correct theerror bit in the read data RMD based on the error position signal EPSwhen the read data RMD includes the error bit and may output thecorrected main data C_MD.

The multiplexer 485 may select one of the read data RMD and thecorrected main data C_MD in response to the error threshold flag ETF andmay provide the selected one to the demultiplexer 490. For example, whenthe error threshold flag ETF indicates that the number of erroroccurrences is equal to or greater than the reference value VTH, themultiplexer 485 may provide the read data RMD to the demultiplexer 490.For example, when the error threshold flag ETF indicates that the numberof error occurrences is less than the reference value VTH, themultiplexer 485 may provide the corrected main data C_MD to thedemultiplexer 490.

The demultiplexer 490, in response to the operation mode signal OMS, mayprovide the I/O gating circuit 290 with an output of the multiplexer 485in the scrubbing operation and may provide the data I/O buffer 295 withthe output of the multiplexer 485 in the read operation.

FIG. 22A illustrates that a normal refresh operation and a scrubbingoperation are performed in the semiconductor memory device 200 of FIG. 2or 200 a of FIG. 9 according to example embodiments.

In FIG. 22A, tRFC denotes a refresh cycle and means a time forrefreshing one memory cell row, and tREFI denotes a refresh interval andmeans an interval between two consecutive refresh commands. The tREFImay be “average” interval between two consecutive refresh commands andthe tRFC may be “minimum” delay between a refresh command and a nextvalid command. The next valid command may include a consecutive refreshcommand.

Referring to FIG. 22A, it is noted that the scrubbing control circuit500 designates at least one memory cell row, on which the ECC circuitperforms the scrubbing operation SCRB S times whenever the normalrefresh operation NREF is performed on memory cell rows N times inresponse to the refresh command. S is a natural number smaller than N.

The scrubbing operation SCRB on one memory cell row includes M scrubbingerror detection and correction operations SCD1˜SCDM during a firstinterval INT11 and one of a scrubbing write back operation SCWC withwriting back corrected data and scrubbing non-write back operationSCW-NC with skipping of writing back corrected data during a secondinterval INT12 of the scrubbing operation.

The ECC circuit 400 in the semiconductor memory device 200 or 200 asequentially read data corresponding a codeword from each of M sub-pagesin the memory cell row, performs error detection and correctionoperation on M codewords to count a number of error occurrences duringthe first interval INT11 of the scrubbing operation and may writing backthe corrected codeword or skipping of writing back the correctedcodeword based on the number of error occurrences during the secondinterval INT12 of the scrubbing operation.

When the counted number of error occurrences is equal to or greater thanthe reference value VTH, a memory cell row including the number oferrors equal to or greater than the reference value VTH has a highprobability of occurrence of a row fault. Writing back the correctedcodeword in a sub-page of the memory cell row in which the row faultoccurs may generate a mis-corrected error in the memory cell row inwhich the row fault occurs and correctable errors in the memory cell rowmay be changed to uncorrectable errors.

FIG. 22B illustrates that a normal refresh operation and an acceleratedscrubbing operation are performed in the semiconductor memory device 200of FIG. 2 or 200 a of FIG. 9 according to example embodiments.

FIG. 22B differs from FIG. 22A in a scrubbing operation SCRB′.

Referring to FIG. 22B, the scrubbing operation SCRB′ includes Mscrubbing error detection and correction operations SCD1˜SCDM on onememory cell row (e.g., a first memory cell row) during a first intervalINT11′ and M scrubbing error detection and correction operationsSCD1˜SCDM on another memory cell row (e.g., a second memory cell row)during a second interval INT12′. When the counted number of erroroccurrences are equal to zero in the M scrubbing error detection andcorrection operations SCD1˜SCDM on one memory cell row (e.g., the firstmemory cell row) during the first interval INT11′, the M scrubbing errordetection and correction operations SCD1˜SCDM on another memory cell row(e.g., the second memory cell row) are performed during the secondinterval INT12′ thus, the scrubbing operation on memory cell rows may berapidly performed.

FIG. 23 illustrates that a scrubbing operation is performed in thesemiconductor memory device 200 of FIG. 2 or 200 a of FIG. 9.

In FIG. 23, a signal RMW is a signal that identifies a first intervaland a second interval of the scrubbing operation, ECC_ON represents anECC decoding operation associated with writing back the corrected data,the error threshold flag ETF is a signal indicates that the countednumber of error occurrences are equal to or greater than the referencevalue and RFD_NO_ERR is a signal indicating that no error is detected inone memory cell row.

Referring to FIGS. 2 and 23, the ECC circuit 400 performs errordetection and correction operation on a plurality of sub-pages in onememory cell row to count a number of error occurrences in a firstinterval INT21 of the scrubbing operation and the signal RFD_NO_ERRtransits to a high level when the counted number of error occurrences isequal to zero. When the errors are detected in the first interval INT21and the counted number of error occurrences is greater than zero andsmaller than the reference value VTH, the signal RFD_NO_ERR transits toa low level and the signal ECC_ON transits to a high level in a secondinterval INT22 because the corrected data is written back in the secondinterval INT22.

Because error is not detected in a first interval INT31 by errordetection and correction operation on another memory cell row, a secondinterval INT32 is very short, and error detection and correctionoperation may be performed on still another memory cell row during athird interval INT33.

Since the error threshold flag ETF is a low level each of intervals inFIG. 23, decoded row address DRA is not stored in the fault addressregister 580 as a row fault address.

FIG. 24 is a flow chart illustrating a scrubbing operation according toexample embodiments.

Referring to FIGS. 2 and 24, the ECC circuit 400 performs an errordetection and correction operation on a first memory cell row by unit ofcodeword (operation S110), determines whether an error occurs in thefirst memory cell row (operation S120). When the error does not occur inthe first memory cell row (NO in operation S120), the control logiccircuit 210 increases a row address by one and the ECC circuit 400performs an error detection operation on a second memory cell row.

When the error occurs in the first memory cell row (YES in operationS120), the control logic circuit 210 determines whether a number oferror occurrences is equal to or greater than the reference value VTH(operation S130). When the number of error occurrences is equal to orgreater than the reference value VTH (YES in operation S130), the ECCcircuit 400 performs a scrubbing operation by skipping of writing back acorrected codeword (operation S140). When the number of erroroccurrences is smaller than the reference value VTH (NO in operationS130), the ECC circuit 400 performs the scrubbing operation by writingback the corrected codeword (operation S150).

FIGS. 25A and 25B illustrate that a normal scrubbing operation and anaccelerated scrubbing operation are performed, respectively, in thesemiconductor memory device 200 of FIG. 2 or 200 a of FIG. 9 accordingto example embodiments.

Referring to FIG. 25A, the scrubbing control circuit 500 in FIG. 2 orthe scrubbing control circuit 500 a in FIG. 13 activates the internalscrubbing signal ISRB during a refresh cycle tRFC corresponding to aninterval between consecutive refresh commands REF.

The control logic circuit 210 or the control logic circuit 210 a maycontrol the column decoder 270 to consecutively generate read columnselection signals SCRB_RCSL with a first period INT41 for selecting aportion of a plurality of bit-lines of a target page associated with thescrubbing operation. The column decoder 270 activates a first readcolumn selection signals SCRB_RCSL after a time tRCD elapses from a timepoint at receiving a first refresh command REF. The control logiccircuit 210 or the control logic circuit 210 a may control the columndecoder 270 to activate write column selection signals SCRB_WCSL forconsecutively selecting a portion of bit-lines of the target pageassociated with writing back operation such that each of the read columnselection signals SCRB_RCSL is activated after a time interval tWRelapses from activation of each of the write column selection signalsSCRB_WCSL.

Referring to FIG. 25B, the scrubbing control circuit 500 in FIG. 2 orthe scrubbing control circuit 500 a in FIG. 13 activates the internalscrubbing signal ISRB during a refresh cycle tRFC corresponding to aninterval between consecutive refresh commands REF.

The control logic circuit 210 or the control logic circuit 210 a maycontrol the column decoder 270 to consecutively generate read columnselection signals SCRB_RCSL with a second period INT42 for selecting aportion of a plurality of bit-lines of a target page associated with thescrubbing operation. The column decoder 270 activates a first readcolumn selection signals SCRB_RCSL after a time tRCD elapses from a timepoint at receiving a first refresh command REF. The control logiccircuit 210 or the control logic circuit 210 a may control the columndecoder 270 to skip generation of write column selection signalsSCRB_WCSL for consecutively selecting a portion of bit-lines of thetarget page associated with writing back operation.

In FIGS. 25A and 25B, the first interval INT41 may be G times greaterthan the second interval INT42 and G is a natural number equal to orgreater than two. In some examples, G may be a positive integer greaterthan one.

Since the write column selection signals SCRB_WCSL are not generated inFIG. 25B, the ECC circuit 400 may perform the scrubbing operation onmore codewords (about two times more codewords) during the internalscrubbing signal ISRB is activated.

The scrubbing operation in FIG. 25B may be rapidly performed during aninitial interval after a power is applied to the semiconductor memorydevice 200 or 200 a and a memory cell row having a row fault may berapidly detected. For example, the initial interval may bepredetermined.

FIG. 26A and 26B illustrate a refresh operation and a scrubbingoperation performed in the semiconductor memory device 200 of FIG. 2 or200 a of FIG. 9, respectively.

Referring to FIG. 26A, it is noted that the scrubbing control circuit500 designates memory cell rows, on which the ECC circuit 400 performsthe scrubbing operation SCRB S times and a refresh operation FREF on anadjacent memory region corresponding to the victim address VCT_ADDR isperformed L times whenever the normal refresh operation NREF isperformed on memory cell rows N times in response to the refreshcommand. Here L is a natural number smaller than N and S is a naturalnumber smaller than L.

Referring to FIG. 26B, it is noted that the scrubbing control circuit500 designates memory cell rows, on which the ECC circuit 400 performsthe scrubbing operation SCRB S times and a refresh operation FREF on anadjacent memory region corresponding to the victim address VCT_ADDR isperformed L/4 times whenever the normal refresh operation NREF isperformed on memory cell rows N/4 times in response to the refreshcommand, in the accelerated scrubbing operation. The control circuit 210may control the scrubbing control circuit 500 to generate the scrubbingaddresses with a period smaller than a normal period determined in aspecification of the semiconductor memory device 200 or 200 a during thescrubbing operation in an initial interval (e.g., a predetermined timeinterval) after a power is applied to the semiconductor memory device200 or 200 a.

The scrubbing operation in FIG. 26B is rapidly performed during aninitial interval (e.g., a predetermined interval) after a power isapplied to the semiconductor memory device 200 or 200 a and a memorycell row having a row fault may be rapidly detected. In some examples,the accelerated scrubbing operation of FIG. 26B may be performed duringthe normal scrubbing operation in response to a specific control signal.

In FIGS. 25B and 26B, the control logic circuit 210 may control the ECCcircuit 400 to perform a background write operation to write defaultdata in the memory cell rows in the initial interval and to perform thescrubbing operation on the default data.

FIG. 27 is a block diagram illustrating a semiconductor memory deviceaccording to example embodiments.

Referring to FIG. 27, a semiconductor memory device 600 may include abuffer die 610 and a group of dies 620 providing a soft error analyzingand correcting function in a stacked chip structure.

The group of dies 620 may include a plurality of memory dies 620-1 to620-p which is stacked on the buffer die 610 and conveys data through aplurality of through substrate via (e.g., through silicon via (TSV))lines.

At least one of the memory dies 620-1 to 620-p may include a cell core621 including a memory cell array, an ECC circuit 622 which generatestransmission parity data based on transmission data to be sent to thebuffer die 611, a refresh control circuit (RCC) 624, a scrubbing controlcircuit (SCC) 623 and a fault address register (FAR) 625. The ECCcircuit 622 may be referred to as ‘cell core ECC circuit’. The ECCcircuit 622 may employ the ECC circuit 400 of FIG. 2 or FIG. 9. Therefresh control circuit 624 may employ the refresh control circuit 385of FIG. 4. The scrubbing control circuit 623 may employ the scrubbingcontrol circuit 500 of FIG. 7 or the scrubbing control circuit 500 a ofFIG. 13.

The ECC circuit 622 and the scrubbing control circuit 623 may perform ascrubbing operation on memory cell rows in the memory die when a refreshoperation is performed on the memory cell row. The ECC circuit 622performs error detection and correction operation on a first memory cellrow to count a number of error occurrences in a first interval of thescrubbing operation and may perform the error detection and correctionoperation on a second memory cell row in a second interval of thescrubbing operation when the counted number of error occurrences isequal to zero. Therefore, the ECC circuit 622 may rapidly perform thescrubbing operation on memory cell rows.

The buffer die 610 may include a via ECC circuit 612 which corrects atransmission error using the transmission parity data when atransmission error is detected from the transmission data receivedthrough the TSV liens and generates error-corrected data.

The semiconductor memory device 600 may be a stack chip type memorydevice or a stacked memory device which conveys data and control signalsthrough the TSV lines. The TSV lines may be also called ‘throughelectrodes’.

A data TSV line group 632 which is formed at least one of the memorydies 620-1 to 620-p may include TSV lines L1 to Lp, and a parity TSVline group 634 may include TSV lines L10 to Lq.

The TSV lines L1 to Lp of the data TSV line group 632 and the parity TSVlines L10 to Lq of the parity TSV line group 634 may be connected tomicro bumps MCB which are correspondingly formed among the memory dies620-1 to 620-p.

At least one of the memory dies 620-1 to 620-p may include DRAM cellseach including at least one access transistor and one storage capacitor.

The semiconductor memory device 600 may have a three-dimensional (3D)chip structure or a 2.5D chip structure to communicate with the hostthrough a data bus B10. The buffer die 610 may be connected to thememory controller 100 through the data bus B10.

The via ECC circuit 612 may determine whether a transmission erroroccurs at the transmission data received through the data TSV line group632, based on the transmission parity data received through the parityTSV line group 634. When a transmission error is detected, the via ECCcircuit 612 may correct the transmission error on the transmission datausing the transmission parity data. When the transmission error isuncorrectable, the via ECC circuit 612 may output information indicatingoccurrence of an uncorrectable data error.

FIG. 28 is a flow chart illustrating an operation method of asemiconductor memory device according to example embodiments.

Referring to FIGS. 1 to 21, 22A, 22B, 23, 24, 25A, 25B, 26A, 26B, 27,and 28, in a method of operating a semiconductor memory device includinga memory cell array 300 which includes a plurality of memory cell rowsand each of the plurality of memory cell rows includes a plurality ofvolatile memory cells, a memory cell row for performing scrubbingoperation is selected from the memory cell rows based on refresh rowaddresses (operation S210). That is, the scrubbing control circuit 500or 500 a may generate scrubbing addresses by counting the refresh rowaddresses.

The ECC circuit 400 performs error detection and correction operation ona plurality of sub-pages in the selected memory cell row to count anumber of error occurrences in a first interval of the scrubbingoperation (operation S230). The ECC circuit 400 may determine a suboperation to be performed in a second interval of the scrubbingoperation based in the counted number of error occurrences in the firstinterval (operation S250).

The control logic circuit 210 may skip writing back the correctedcodeword in response to the counted number of error occurrences beingequal to or greater than a reference value in the second interval. Thecontrol logic circuit 210 may write back the corrected codeword in acorresponding sub-page in response to the counted number of erroroccurrences being smaller than the reference value and greater than zeroin the second interval. The control logic circuit 210 may perform errordetection and correction operation on a plurality of sub-pages in asecond memory cell row in the second interval in response to the countednumber of error occurrences being zero.

FIG. 29 is a diagram illustrating a semiconductor package including thestacked memory device, according to example embodiments.

Referring to FIG. 29, a semiconductor package 900 may include one ormore stacked memory devices 910 and a graphic processing unit (GPU) 920.The GPU 920 may include a memory controller 925.

The stacked memory devices 910 and the GPU 920 may be mounted on aninterposer 930, and the interposer on which the stacked memory devices910 and the GPU 920 are mounted may be mounted on a package substrate940. The package substrate 940 may be mounted on solder balls 950. Thememory controller 925 may employ the memory controller 100 in FIG. 1.

Each of the stacked memory devices 910 may be implemented in variousforms, and may be a memory device in a high bandwidth memory (HBM) formin which a plurality of layers are stacked. Accordingly, each of thestacked memory devices 910 may include a buffer die and a plurality ofmemory dies. Each of the memory dies may include the memory cell array,the ECC circuit, the scrubbing control circuit and the fault addressregister as described previously.

The plurality of stacked memory devices 910 may be mounted on theinterposer 930, and the GPU 920 may communicate with the plurality ofstacked memory devices 910. For example, each of the stacked memorydevices 910 and the GPU 920 may include a physical region, andcommunication may be performed between the stacked memory devices 910and the GPU 920 through the physical regions.

As mentioned above, according to example embodiments, a semiconductormemory device includes an ECC circuit, a scrubbing control circuit and afault address register. The ECC circuit sequentially performs errordetection and correction operation on codewords in a memory cell rowdesignated by a scrubbing address provided from the scrubbing controlcircuit to count a number of error occurrences in a first interval ofthe scrubbing operation and may determine a sub operation in a secondperiod of the scrubbing operation based on the counted number of erroroccurrences. Therefore, the ECC circuit may rapidly perform scrubbingoperation during an initial interval after a power is applied to thesemiconductor memory device and a memory cell row having a row fault maybe rapidly detected.

Aspects of the present inventive concept may be applied to systems usingsemiconductor memory devices that employ an ECC circuit. For example,aspects of the present inventive concept may be applied to systems suchas be a smart phone, a navigation system, a notebook computer, a desktop computer and a game console that use the semiconductor memory deviceas a working memory.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present disclosure asdefined in the appended claims.

What is claimed is:
 1. A semiconductor memory device comprising: amemory cell array including a plurality of memory cell rows, each of theplurality of memory cell rows including volatile memory cells coupled toa plurality of bit-lines; an error correction code (ECC) circuit; afault address register; a scrubbing control circuit configured togenerate scrubbing addresses for performing a scrubbing operation on afirst memory cell row selected from the plurality of memory cell rowsbased on refresh row addresses for refreshing the memory cell rows; anda control logic circuit configured to control the ECC circuit and thescrubbing control circuit, wherein the control logic circuit isconfigured to: control the ECC circuit such that the ECC circuitperforms an error detection and correction operation on a plurality ofcodewords of a plurality of sub-pages in the first memory cell row byunit of codeword to count a number of error occurrences during a firstinterval in the scrubbing operation; perform a row fault detectionoperation to selectively store a row address of the first memory cellrow in the fault address register as a row fault address based on thenumber of error occurrences in the first memory cell row; and determinea sub operation in a second interval in the scrubbing operation afterthe first interval based on the number of error occurrences in the firstmemory cell row.
 2. The semiconductor memory device of claim 1, whereinthe control logic circuit is configured to, in response to the number oferror occurrences in the first memory cell row being a zero, control theECC circuit such that the ECC circuit performs the error detection andcorrection operation on a plurality of sub-pages in a second memory cellrow selected from the plurality of memory cell rows, the second memorycell row being different from the first memory cell row, and wherein thedetermined sub operation includes the error detection and correctionoperation on the plurality of sub-pages in the second memory cell row.3. The semiconductor memory device of claim 1, wherein the control logiccircuit is configured to, in response to the number of error occurrencesbeing greater than zero and smaller than a reference value, control theECC circuit such that the ECC circuit writes back a corrected codewordin a corresponding sub-page of the first memory cell row during thesecond interval of the scrubbing operation, and wherein the determinedsub operation includes writing back the corrected codeword in thecorresponding sub-page of the first memory cell row.
 4. Thesemiconductor memory device of claim 1, wherein the control logiccircuit is configured to, in response to the number of error occurrencesbeing equal to or greater than a reference value, control the ECCcircuit such that the ECC circuit does not write back a correctedcodeword in a corresponding sub-page of the first memory cell row duringthe second interval of the scrubbing operation, and wherein thedetermined sub operation includes no writing back the corrected codewordin the corresponding sub-page of the first memory cell row.
 5. Thesemiconductor memory device of claim 1, further comprising: a columndecoder configured to consecutively generate column selection signalswith a first period for selecting a portion of the plurality ofbit-lines, in response to a column address in a normal mode, wherein thecontrol logic circuit is configured to control the column decoder suchthat during an initial interval after a power is applied to thesemiconductor memory device, the column decoder generates read columnselection signals with a second period smaller than the first period,the read column selection signals being associated with a read operationthat is performed in the first interval of the scrubbing operation, andwherein the initial interval is a predetermined interval.
 6. Thesemiconductor memory device of claim 5, wherein the control logiccircuit is configured to control the column decoder such that the columndecoder skips generation of write column selection signals associatedwith a write operation corresponding to the read operation in the firstinterval of the scrubbing operation.
 7. The semiconductor memory deviceof claim 5, wherein the first period is G times greater than the secondperiod and G is a natural number equal to or greater than two.
 8. Thesemiconductor memory device of claim 5, wherein an interval during whichthe scrubbing operation is performed is determined based on consecutiverefresh commands received from an outside of the semiconductor memorydevice.
 9. The semiconductor memory device of claim 1, wherein in thescrubbing operation, the control logic circuit is configured to controlthe scrubbing control circuit such that the scrubbing control circuitgenerates the scrubbing addresses with a second period smaller than afirst period determined in a specification of the semiconductor memorydevice during an initial interval after a power is applied to thesemiconductor memory device, and wherein the initial interval is apredetermined interval.
 10. The semiconductor memory device of claim 9,wherein the control logic circuit is configured to control the ECCcircuit such that the ECC circuit: performs a background write operationto write default data in the memory cell rows in the initial interval;and performs the scrubbing operation on the default data.
 11. Thesemiconductor memory device of claim 1, wherein the control logiccircuit is configured to store a row address of the first memory cellrow in the fault address register as the row fault address in responseto the number of error occurrences in the first memory cell row detectedin the first interval being equal to or greater than K, K being anatural number equal to or greater than two.
 12. The semiconductormemory device of claim 1, wherein the scrubbing control circuitincludes: a counter configured to count the refresh row addresses togenerate an internal scrubbing signal, wherein the counter activates theinternal scrubbing signal whenever the counter counts N refresh rowaddresses, N being a natural number equal to or greater than two; ascrubbing address generator configured to generate a normal scrubbingaddress associated with a normal scrubbing operation for the firstmemory cell row in a first scrubbing mode, in response to the internalscrubbing signal and a scrubbing mode signal; and a weak codewordaddress generator configured to generate a weak codeword addressassociated with a weak scrubbing operation associated with weakcodewords in the first memory cell row in a second scrubbing mode, inresponse to the internal scrubbing signal and the scrubbing mode signal.13. The semiconductor memory device of claim 12, wherein the normalscrubbing address includes a scrubbing row address designating onememory cell row and a scrubbing column address designating one ofcodewords included in the one memory cell row, and wherein the scrubbingaddress generator includes: a page segment counter configured toincrease the scrubbing column address by one during the internalscrubbing signal being activated; and a row counter configured toincrease the scrubbing row address by one whenever the scrubbing columnaddress reaches a maximum value.
 14. The semiconductor memory device ofclaim 12, wherein the weak codeword address generator includes: anaddress storing table configured to store address information of theweak codewords; and a table pointer configured to generate a pointersignal that provides location information of the address storing tablein response to the internal scrubbing signal.
 15. The semiconductormemory device of claim 1, wherein the ECC circuit includes an ECCdecoder configured to perform the error detection and correctionoperation on a plurality of codewords, and wherein the ECC decoderincludes: a data latch configured to store the plurality of codewords; asyndrome generation circuit configured to generate a syndrome based on amain data and a parity data of each of the plurality of codewords; anerror locator configured to generate an error position signal indicatinga position of at least one error bit in the main data, based on thesyndrome; and a data corrector configured to receive codewords which areselected from the plurality of codewords stored in the data latch, andconfigured to correct an error bit in each of the selected codewords.16. The semiconductor memory device of claim 1, wherein the controllogic circuit is configured to perform a soft post package repair on amemory cell row corresponding to the row fault address by storing datastored in the memory cell row corresponding to the row fault address ina redundancy region of the memory cell array.
 17. The semiconductormemory device of claim 1, further comprising: at least one buffer die;and a plurality of memory dies stacked on the at least one buffer dieand conveying data through a plurality of through silicon via (TSV)lines, wherein at least one of the plurality of memory dies includes thememory cell array, the ECC circuit, the scrubbing control circuit and arefresh control circuit that generates the refresh row addresses.
 18. Amethod of operating a semiconductor memory device including a memorycell array that includes a plurality of memory cell rows, each of theplurality of memory cell rows including a plurality of volatile memorycells, the method comprising: selecting a first memory cell row from theplurality of memory cell rows based on refresh row addresses forrefreshing memory cells connected to the memory cell rows; performing,by an error correction code (ECC) circuit, an error detection andcorrection operation on a plurality of codewords of a plurality ofsub-pages in the first memory cell row by unit of codeword to count anumber of error occurrences during a first interval in a scrubbingoperation; and determining a sub operation in a second interval of thescrubbing operation after the first interval based on the number oferror occurrences, wherein the sub operation includes one of writingback a corrected codeword in a corresponding sub-page in the firstmemory cell row and the error detection and correction operation on asecond memory cell row of the plurality of memory cell rows differentfrom the first memory cell row.
 19. The method of claim 18, furthercomprising: performing a row fault detection operation to selectivelystore a row address of the first memory cell row in a fault addressregister as a row fault address based on the number of error occurrencesin the first memory cell row.
 20. A semiconductor memory devicecomprising: a memory cell array including a plurality of memory cellrows, each of the plurality of memory cell rows including volatilememory cells; an error correction code (ECC) circuit; a fault addressregister; a scrubbing control circuit configured to: generate scrubbingaddresses, perform a scrubbing operation on a first memory cell rowselected from the plurality of memory cell rows based on refresh rowaddresses for refreshing the memory cell rows; and a control logiccircuit configured to: control the ECC circuit such that the ECCcircuit: performs an error detection and correction operation on aplurality of codewords of a plurality of sub-pages in the first memorycell row by unit of codeword to count a number of error occurrencesduring a first interval in the scrubbing operation, and in response tothe number of error occurrences in the first memory cell row being azero, performs the error detection and correction operation on aplurality of sub-pages in a second memory cell row of the plurality ofmemory cell rows different from the first memory cell row; perform a rowfault detection operation to selectively store a row address of thefirst memory cell row in the fault address register as a row faultaddress based on the number of error occurrences in the first memorycell row; and determine a sub operation in a second interval in thescrubbing operation after the first interval based on the number oferror occurrences in the first memory cell row, wherein the suboperation includes one of writing back a corrected codeword in acorresponding sub-page in the first memory cell row and the errordetection and correction operation on a second memory cell row differentfrom the first memory cell row.